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Type: 1Mx16
Part Number VG3617161BT

Description  
Cycle Time (ns) 6/7/8/10
Features (Refresh) Syn. (2K)
Package (pin-width, type) 50-400 mil TSOP
 

Description:

The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word x 16-bit x 2-bank.  It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply.   This SDRAM is delicately designed with performance concern for current high-speed application.  Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. It is packaged by using JEDEC standard pintouts and standard plastic 50-pin TSOP II.

Features:

  • Single 3.3V +/- 0.3V power supply
  • Clock Frequency: 166MHz, 143MHz, 125MHz, 100MHz
  • Fully synchronous with all signals referenced to a postive clock edge
  • Programmable CAS latency (2,3)
  • Programmable burst length (1,2,4,8, & full page)
  • Programmable wrap sequence (Sequential/Interleave)
  • Automatic precharge and controlled precharge
  • Auto refresh and self refresh modes
  • Dual internal banks controlled by A11 (Bank select)
  • Simultaneous and independent two bank operation
  • I/O level: LVTTL interface
  • Random column access in every cycle
  • X16 organization
  • Byte control by LDQM and UDQM
  • 2048 refresh cycles/32ms
  • Burst termination by burst stop and precharge command

 

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