Product Description:

The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word  x 8-bit x 4-bank.  It is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.  It is packaged in JEDEC standard pinout and standard plastic TSOP package.

Product Features:

• Single 3.3V (0.3V) power supply
• High speed clock cycle time: 8/10ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS latency (2,3)
• Programmable burst length (1,2,4,8 & Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A12 & A13 (Bank select)
• Each Bank can operate simultaneously and independently
• LVTTL compatible I/O interface
• Random column access in every cycle
• X8 organization
• Input/Output controlled by DQM
• 4,096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option